교수진소개
배시영조교수
- 주소 : 대연캠퍼스 아름관 C28 304A호
- 이메일 :
- 전화번호 : 051-629-7892
- 홈페이지 : https://sites.google.com/view/siyoungbae/home
PhD Degree, Gwangju Institute of Science and Technology (GIST), Korea
School of Information and Communications Mar. 2009 Aug. 2013
MS Degree, Gwangju Institute of Science and Technology (GIST), Korea
School of Information and Mechatronics, Mar. 2007 Feb. 2009
BS Degree, Pukyoung National University (PKNU), Korea
Department of Electronics and Telecommunication Engineering,
Mar. 2000 Aug. 2007
Assistant Professor, Pukyong National University, Korea
Department of Nanotechnology and Semiconductor Engineering, Major of Semiconductor Engineering
Sep. 2024 - Present
Senior researcher, Korea Institute of Ceramic Engineering & Technology (KICET), South Korea
Energy & Environmental Division, Jul. 2017 Aug. 2024
Postdoc researcher, Nagoya University, Japan
Dept. of Electrical Engineering and Computer Science, Apr. 2014 Jul. 2017
Postdoc researcher, Gwangju Institute of Science and Technology (GIST), South Korea
School of Information and Communications, Aug. 2013 Feb. 2014
Wide bandgap semiconductor materials: Ga2O3, SiC, Diamond, and III-nitrides
- Epitaxy of compound semiconductors for optoelectronic applications
- Single crystal growth for power electronics
- Fabrication/characterization/packaging of semiconductor devices
- Advanced lithography (nanoimprint/nanosphere/holographic lithography)
- Crystal analysis of thin films by high-resolution TEM and XRD
상평형 및 결정성장론, 파워반도체 공학
구글스칼라
Recent papers
NM Phung, MT Ha, SY Bae, S Lee, TJ Park, SH Kwon, SM Jeong, “Towards modeling of ZrO2 atomic layer deposition at reactor scale based on experimental kinetic approximation”, Applied Surface Science 646, 158840 (2024)
WH Jeong, SM Choi, SM Lim, YJ Shin, SY Bae, JK Kang, WJ Lee, SH Kwon, SM Jeong, “Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method”, Crystals, 13,1591 (2023)
YJ Shin, SM Lim, WH Jeong, SH Cho, MH Choi, WJ Lee, SM Jeong, SY Bae*, “Growth of (100) β-Ga2O3 single crystal by controlling the capillary behaviors in EFG system”, Japanese Journal of Applied Physics, 62, SF1022 (2023)
H Cho, YJ Shin, SM Jeong, SH Kwon, SY Bae*, “Two-step growth of κ-Ga2O3 thin films on 4H-SiC substrates with temperature-varied buffer layers using mist chemical vapor deposition”, Japanese Journal of Applied Physics 62, 015508 (2023)
J Kim, YH Kim, YJ Shin, DS Lee*, SY Bae*, “The effect of thermally treated AlN powder on PVT-grown single crystals”, CrystEngComm, 25, 314 (2023)
SY Park, MT Ha, KH Kim, YJ Shin, SM Jeong, SH Kwon, SY Bae, “Enhanced thickness uniformity of large-scale α-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition”, Ceramics International 48 (4), 5075-5082 (2022)
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